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| savantic semiconductor product specification silicon pnp power transistors 2SB1375 d escription with to-220f package complement to type 2sd2012 low collector saturation voltage: v ce(sat) =-1.5v(max) at i c =-2a,i b =-0.2a collector power dissipation: p c =25w(t c =25 ) applications audio frequency power amplifier pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -7 v i c collector current -3 a i b base current -0.5 a t a =25 2.0 p c collector dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1375 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -60 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-0.2a -1.0 -1.5 v v be base-emitter voltage i c =-0.5a;v ce =-5v -0.75 -1.0 v i cbo collector cut-off current v cb =-60v; i e =0 -10 a i ebo emitter cut-off current v eb =-7v; i c =0 -10 a h fe-1 dc current gain i c =-0.5a ; v ce =-5v 100 320 h fe-2 dc current gain i c =-2a ; v ce =-5v 15 f t transition frequency i c =-0.5a ; v ce =-5v 9 mhz c ob collector output capacitance i e =0; f=1mhz;v cb =-10v 50 pf savantic semiconductor product specification 3 silicon pnp power transistors 2SB1375 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon pnp power transistors 2SB1375 |
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